Author:
Kham M.N.,El Mubarek H.A.W.,Bonar J.M.,Chivers D.,Ashburn P.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. Boron, fluorine, and carrier profiles for B and BF2implants into crystalline and amorphous Si
2. Effect of fluorine implantation dose on boron thermal diffusion in silicon
3. Reduction of boron thermal diffusion in silicon by high energy fluorine implantation
4. 110-GHz f/sub T/ silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression
5. H. Fukutome, Y. Momiyama, H. Nakao, T. Aoyama, H. Arimoto, IEEE Electron Device Meeting, 485, 2003, 20.2.1.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献