Effect of fluorine implantation dose on boron thermal diffusion in silicon-Reference-Cited by-同舟云学术

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Effect of fluorine implantation dose on boron thermal diffusion in silicon

Published:2004-10-15 Issue:8 Volume:96 Page:4114-4121
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

El Mubarek H. A. W.,Bonar J. M,Dilliway G. D.,Ashburn P.,Karunaratne M.,Willoughby A. F.,Wang Y.,Hemment P. L. F.,Price R.,Zhang J.,Ward P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1790063

Reference30 articles.

1. Boron, fluorine, and carrier profiles for B and BF2implants into crystalline and amorphous Si

2. Advantages of Fluorine Introduction in Boron Implanted Shallow p+/n-Junction Formation

3. Effect of fluorine on the diffusion of through‐oxide implanted boron in silicon

4. The effect of fluorine on the redistribution of boron in ion‐implanted silicon

5. Influence of fluorine preamorphization on the diffusion and activation of low‐energy implanted boron during rapid thermal annealing

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliability challenges in CMOS technology: A manufacturing process perspective;Microelectronic Engineering;2023-09

2. Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon;Journal of Applied Physics;2020-09-14

3. Reduction in number of crystal defects in a p+Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing;Japanese Journal of Applied Physics;2017-08-22

4. Superior Improvements in GIDL and Retention by Fluorine Implantation in Saddle-Fin Array Devices for Sub-40-nm DRAM Technology;IEEE Electron Device Letters;2013-09

5. A comprehensive model for the diffusion of boron in silicon in presence of fluorine;Solid-State Electronics;2013-09

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