The effect of fluorine on the redistribution of boron in ion‐implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355216
Reference10 articles.
1. The behaviour of boron molecular ion implants into silicon
2. Boron, fluorine, and carrier profiles for B and BF2implants into crystalline and amorphous Si
3. Effects of annealing on the damage morphologies in BF 2 + ion implanted (1 0 0) silicon
4. Electrical properties of Si heavily implanted with boron molecular ions
5. A Structural and Electrical Comparison of BCl and BF 2 Ion‐Implanted Silicon
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1. A failure mechanism and improved method for abnormal IDS leakage current of shield gate trench MOSFET;Materials Science in Semiconductor Processing;2023-11
2. Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon;Journal of Applied Physics;2020-09-14
3. Reduced boron diffusion under interstitial injection in fluorine implanted silicon;Journal of Applied Physics;2007-12
4. Point defect engineering in preamorphized silicon enriched with fluorine;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12
5. 110-GHz f/sub T/ silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression;IEEE Transactions on Electron Devices;2006-03
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