Effects of annealing on the damage morphologies in BF 2 + ion implanted (1 0 0) silicon

Author:

Paek M. C.,Im H. B.,Lee J. Y.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Formation of Ultra-Shallow Junctions;Reference Module in Materials Science and Materials Engineering;2016

2. Ion implantation of boric molecules for silicon solar cells;Solar Energy Materials and Solar Cells;2015-11

3. (Invited) Defect Engineering at the Nanoscale: Challenges and Trends;ECS Transactions;2013-03-15

4. Formation of Ultra-Shallow Junctions;Comprehensive Semiconductor Science and Technology;2011

5. Fluorine implantation effect on boron diffusion in Si;Journal of Applied Physics;1999-01-15

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