Reduction of transient‐enhanced diffusion of boron in silicon by implantation through oxide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100891
Reference9 articles.
1. Enhanced tail diffusion of ion implanted boron in silicon
2. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
3. Reverse annealing and low‐temperature diffusion of boron in boron‐implanted silicon
4. Implantation damage and the anomalous transient diffusion of ion‐implanted boron
5. Transient boron diffusion in ion‐implanted crystalline and amorphous silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Current status of models for transient phenomena in dopant diffusion and activation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01
2. Solutions to Gate Oxide Integrity on TFSOI Substrates Caused by PMOS Threshold-Voltage Implant;MRS Proceedings;1998-01
3. Effect of Fluorine on the Dopant Diffusion of Through-Oxtoe Implanted Boron in Si - a Correlation with Microstructural Defects;MRS Proceedings;1992
4. Effect of fluorine on the diffusion of through‐oxide implanted boron in silicon;Applied Physics Letters;1991-09-02
5. Role of recoil implanted oxygen in determining boron diffusion in silicon;Journal of Applied Physics;1990-05-15
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