Point defects in Si thin films grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107881
Reference11 articles.
1. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)
2. Low‐temperature Si molecular beam epitaxy: Solution to the doping problem
3. Microvoid formation in low-temperature molecular-beam-epitaxy-grown silicon
4. Positron beam defect profiling of silicon epitaxial layers
5. Interaction of positron beams with surfaces, thin films, and interfaces
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