Microvoid formation in low-temperature molecular-beam-epitaxy-grown silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.14257/fulltext
Reference16 articles.
1. Kinetics of ordered growth of Si on Si(100) at low temperatures
2. Low temperature kinetics of Si(100) MBE growth
3. Limiting thickness h_{epi} for epitaxial growth and room-temperature Si growth on Si(100)
4. Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1−x/Si strained layer superlattices
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