Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers-Reference-Cited by-同舟云学术

Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

Author:

Luna E.¹^ORCID,Wu M.¹^ORCID,Aoki T.²,McCartney M. R.³,Puustinen J.⁴,Hilska J.⁴^ORCID,Guina M.⁴,Smith D. J.³,Trampert A.¹^ORCID

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany

2. LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287, USA

3. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

4. Optoelectronics Research Centre, Physics Unit, Tampere University, Korkeakoulunkatu 3, 33720 Tampere, Finland

Funder

H2020 European Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference73 articles.

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