Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers
Author:
Affiliation:
1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
2. Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI- 33101 Tampere, Finland
Funder
Suomen Akatemia (Academy of Finland)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4919896
Reference37 articles.
1. Growth and properties of the dilute bismide semiconductor GaAs1−xBix a complementary alloy to the dilute nitrides
2. Electronic consequences of lateral composition modulation in semiconductor alloys
3. The consequence of lateral composition modulation on the anisotropic emission for transitions to the heavy hole subbands in InGaAs quantum wells
4. Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy
5. Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates
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