The consequence of lateral composition modulation on the anisotropic emission for transitions to the heavy hole subbands in InGaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2952016
Reference22 articles.
1. High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
2. Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy
3. Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers
4. InGaAs/InP long wavelength quantum well infrared photodetectors
5. Spinodal-like decomposition of grown by gas source molecular beam epitaxy
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1. Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers;Journal of Applied Physics;2015-05-14
2. Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation;Journal of Applied Physics;2012-04-15
3. InAs quantum wire induced composition modulation in an In0.53Ga0.37Al0.10As barrier layer grown on an InP substrate;Journal of Applied Physics;2010-08
4. Quantitative compositional analysis and strain study of InAs quantum wires with InGaAlAs barrier layers;Journal of Applied Physics;2009-05
5. The response of semiconductor optical amplifiers containing lateral composition modulation in the quantum wells;Journal of Applied Physics;2008-11
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