Quantitative compositional analysis and strain study of InAs quantum wires with InGaAlAs barrier layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3122596
Reference42 articles.
1. InAs/InP Quantum-Dash Lasers and Amplifiers
2. Self-assembled InAs quantum wire lasers
3. Composition of self-assembled quantum dots
4. Nano-Optoelectronics
5. Composition determination of semiconductor quantum wires by X-ray scattering
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1. Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy;Journal of Applied Physics;2018-05-28
2. New pathways for improved quantification of energy-dispersive X-ray spectra of semiconductors with multiple X-ray lines from thin foils investigated in transmission electron microscopy;Journal of Microscopy;2015-11-02
3. High resolution STEM of quantum dots and quantum wires;Micron;2013-01
4. Aberration-corrected STEM and EELS of semiconducting nanostructures;Journal of Physics: Conference Series;2011-11-09
5. Effect of layer separation, InAs thickness, and rapid thermal annealing on the optical emission from a multi-layer quantum wire structure;Journal of Applied Physics;2011-06-15
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