Composition determination of semiconductor quantum wires by X-ray scattering-Reference-Cited by-同舟云学术

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Composition determination of semiconductor quantum wires by X-ray scattering

Published:2005-02 Issue:1-2 Volume:357 Page:6-10
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Hsu C.-H.,Tang Mau-Tsu,Lee Hsin-Yi,Huang Chih-Mon,Liang K.S.,Lin S.D.,Lin Z.C.,Lee C.P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Interdependence of strain and shape in self-assembled coherent InAs islands on GaAs

2. Nanometer-Scale Resolution of Strain and Interdiffusion in Self-AssembledInAs/GaAsQuantum Dots

3. Anomalous x-ray diffraction on InAs/GaAs quantum dot systems

4. Direct evaluation of composition profile, strain relaxation, and elastic energy of Ge:Si(001) self-assembled islands by anomalous x-ray scattering

5. Direct Determination of Strain and Composition Profiles in SiGe Islands by Anomalous X-Ray Diffraction at High Momentum Transfer

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative compositional analysis and strain study of InAs quantum wires with InGaAlAs barrier layers;Journal of Applied Physics;2009-05

2. Some remarks to the nanowires grown on Ill-V substrate;2008 International Conference on Advanced Semiconductor Devices and Microsystems;2008-10

3. Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111);Applied Physics Letters;2007-11-12

4. Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant;Applied Physics Letters;2007-04-09

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