Nanometer-Scale Resolution of Strain and Interdiffusion in Self-AssembledInAs/GaAsQuantum Dots-Reference-Cited by-同舟云学术

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Nanometer-Scale Resolution of Strain and Interdiffusion in Self-AssembledInAs/GaAsQuantum Dots

Published:2000-08-21 Issue:8 Volume:85 Page:1694-1697
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Kegel I.,Metzger T. H.,Lorke A.,Peisl J.,Stangl J.,Bauer G.,García J. M.,Petroff P. M.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.85.1694/fulltext

Reference24 articles.

1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

2. Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots

3. Semiconductor Clusters, Nanocrystals, and Quantum Dots

4. Nonuniform Composition Profile inIn0.5Ga0.5AsAlloy Quantum Dots

5. Enhanced Nucleation and Enrichment of Strained-Alloy Quantum Dots

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1. Self-organized semiconductor nanostructures (quantum dots, quantum rings and their arrays);Encyclopedia of Condensed Matter Physics;2024

2. Aharonov-Bohm effect in self-assembled InAs/GaAs Quantum Rings: Fabrication, formation mechanism and optical characterization☆;Encyclopedia of Condensed Matter Physics;2024

3. Quantum dots for photonic quantum information technology;Advances in Optics and Photonics;2023-08-30

4. Culling a Self-Assembled Quantum Dot as a Single-Photon Source Using X-ray Microscopy;ACS Nano;2023-07-31

5. Indium segregation and In–Ga inter-diffusion effects on the photoluminescence measurements and nonlinear optical properties in lens-shaped InxGa1-xAs/GaAs quantum dots;Journal of Physics and Chemistry of Solids;2022-01

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