Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots-Reference-Cited by-同舟云学术

Spatially Resolved Visible Luminescence of Self-Assembled Semiconductor Quantum Dots

Published:1995-03-31 Issue:5206 Volume:267 Page:1966-1968
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Leon R.¹,Petroff P. M.²,Leonard D.³,Fafard S.¹

Affiliation:

1. Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, CA, 93106, USA.

2. Center for Quantized Electronic Structures (QUEST), Materials Department, and Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93106, USA.

3. Center for Quantized Electronic Structures (QUEST) and Materials Department, University of California, Santa Barbara, CA, 93106, USA.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference25 articles.

1. BRANDT, O, INAS QUANTUM DOTS IN A SINGLE-CRYSTAL GAAS MATRIX, PHYSICAL REVIEW B 44: 8043 (1991).

2. CHANG, S.Z., THE GROWTH OF HIGHLY MISMATCHED INXGA1-XAS (0.28-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) ON GAAS BY MOLECULAR-BEAM EPITAXY, JOURNAL OF APPLIED PHYSICS 73: 4916 (1993).

3. DREXLER, H, SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS, PHYSICAL REVIEW LETTERS 73: 2252 (1994).

4. EAGLESHAM, D.J., DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100), PHYSICAL REVIEW LETTERS 64: 1943 (1990).

5. ELMAN, B, INSITU MEASUREMENTS OF CRITICAL LAYER THICKNESS AND OPTICAL STUDIES OF INGAAS QUANTUM WELLS GROWN ON GAAS SUBSTRATES, APPLIED PHYSICS LETTERS 55: 1659 (1989).

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