Preparation of Si quantum dots by phase transition with controlled annealing-Reference-Cited by-同舟云学术

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Preparation of Si quantum dots by phase transition with controlled annealing

Published:2021-07-23 Issue:41 Volume:32 Page:415205
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Fang Liyuan^ORCID,Tang Libin^ORCID,Teng Kar Seng^ORCID,Xiang Jinzhong

Funder

Yunnan Key Laboratory of Advanced Photoelectric Materials & Devices, China.

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

https://iopscience.iop.org/article/10.1088/1361-6528/ac1196/pdf

Reference25 articles.

1. Optical absorption evidence of a quantum size effect in porous silicon;Sagnes;Appl. Phys. Lett.,1993

2. Science at the atomic scale;Ball;Nature,1992

3. Spatially resolved visible luminescence of self-assembled semiconductor quantum dots;Leon;Science,1995

4. Influence of dissipation on quantum tunneling in macroscopic systems;Caldeira;Phys. Rev. Lett.,1981

5. Cheminform abstract: photochemistry of colloidal semiconductors: XX. Surface modification and stability of strong luminescing CdS particles;Spanhel;J. Am. Chem. Soc.,1987

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