Affiliation:
1. Sandia National Laboratories
2. University of California - Los Angeles
Abstract
This Letter reports the growth, fabrication, and characterization of
molecular beam epitaxy (MBE)-grown quaternary InAlGaAs/GaAs quantum
dot (QD) lasers emitting at sub-900 nm. The presence of Al in
QD-based active regions acts as the origin of defects and
non-radiative recombination centers. Applying optimized thermal
annealing annihilates the defects in p-i-n diodes,
thus lowering the reverse leakage current by six orders of magnitude
compared to as-grown devices. A systematic improvement in the optical
properties of the devices is also observed in the laser devices with
increasing annealing time. At an annealing temperature of 700°C
for 180 s, Fabry–Pérot lasers exhibit a lower pulsed
threshold current density at infinite length of 570
A/cm2.
Subject
Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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