Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2722226
Reference10 articles.
1. First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide
2. The Yttria-Hafnia System
3. Epitaxial growth of yttrium-stabilized HfO2 high-kgate dielectric thin films on Si
4. Permittivity increase of yttrium-doped HfO2 through structural phase transformation
5. Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition
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