Influence of Y2O3 Doped HfO2 High-k Films on Electrical Properties of MOS and MIM Devices-Reference-Cited by-同舟云学术

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Influence of Y₂O₃ Doped HfO₂ High-k Films on Electrical Properties of MOS and MIM Devices

Published:2022-07-22 Issue: Volume: Page:
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Container-title:2022 IEEE 5th International Conference on Knowledge Innovation and Invention (ICKII )
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Author:

Yen Chih-Feng¹,Huang Yu-Ya¹,Tsao Shen-Hao¹,Lin Shih-Hao²,Cheng Chun-Hu³

Affiliation:

1. National Kaohsiung University of Science and Technology,Department of Microelectronics Engineering,Kaohsiung,Taiwan

2. National Yang Ming Chiao Tung University,International College of Semiconductor Technology,Hsinchu,Taiwan

3. National Taiwan Normal University,Department of Mechatronic Engineering,Taipei,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9983535/9983517/09983564.pdf?arnumber=9983564

Reference14 articles.

1. The role of carbon contamination in voltage linearity and leakage current in high-k metal-insulator-metal capacitors

2. Electrical Characteristics of Thermally Evaporated HfO[sub 2]

3. Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

4. Frequency Dependent Electrical Characteristics οf Au/n-Si/CuPc/Au Heterojunction

5. Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

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