Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/5/6/1005/pdf
Reference87 articles.
1. Electrical characterization and dielectric property of MIS capacitors using a high-k CeZrO4 ternary oxide as the gate dielectric;Juan;Jpn. J. Appl. Phys.,2009
2. Pentacene Thin-Film Transistors with Ta2O5 as the Gate Dielectric
3. Tension deformation mechanism and fracture characteristics of high nitrogen steel 6Cr21Mn10MoVNbN at 25–800°C
4. International Technology Roadmap for Semiconductors Home pagehttp://public.itrs.net/
5. Oxide-thickness determination in thin-insulator MOS structures
Cited by 60 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Microstructure and microwave‐absorbing properties of B4C/C composite powders produced by combustion synthesis with an AC foaming agent;International Journal of Applied Ceramic Technology;2024-01-18
2. Impact of varying wet oxidation temperature in the presence of nitrogen flow on hafnium tantalum oxide films;Ceramics International;2023-12
3. Enhancing the Tunable Sensitivity of a Near-Ultraviolet to Visible to Near-Infrared Photo Irradiance Sensor Using an Indium Tin Oxide-Aluminum Oxide-Zirconia Aluminum Oxide-Silicon;Crystals;2023-10-24
4. The structural, electrical, and photoelectrical properties of Al/Cu2CdSnS4 chalcogenide film/p-Si Schottky-type photodiode;Journal of Materials Science: Materials in Electronics;2023-10
5. Post-deposition annealing effect on the structural and electrical properties of ytterbium oxide as an alternative gate dielectric;Materials Chemistry and Physics;2022-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3