Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4704682
Reference41 articles.
1. From visible to white light emission by GaN quantum dots on Si(111) substrate
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1. Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings;Journal of Applied Physics;2023-11-16
2. Wetting-Layer-Free AlGaN Quantum Dots for Ultraviolet Emitters;ACS Applied Nano Materials;2020-05-04
3. UVA and UVB light emitting diodes with Al y Ga1−y N quantum dot active regions covering the 305–335 nm range;Semiconductor Science and Technology;2018-06-04
4. Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition;Nanotechnology;2014-07-10
5. AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission;Japanese Journal of Applied Physics;2013-08-01
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