Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates-Reference-Cited by-同舟云学术

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Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates

Published:2004 Issue:4 Volume:22 Page:2195
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Trampert Achim,Chauveau Jean-Michel,Ploog Klaus H.,Tournié Eric,Guzmán Alvaro

Publisher

American Vacuum Society

Subject

General Engineering

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