Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy

Published:2019-09-07 Issue:9 Volume:126 Page:095108
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kosireddy R. R.¹,Schaefer S. T.²,Shalindar A. J.²,Johnson S. R.²

Affiliation:

1. Center for Photonics Innovation & School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287, USA

2. Center for Photonics Innovation & School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

Funder

National Science Foundation

Sandia National Laboratories

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5096795

Reference27 articles.

1. Progress in Infrared Photodetectors Since 2000

2. Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices

3. Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

4. Molecular beam epitaxy growth and optical properties of InAsSbBi

5. Structural properties of bismuth‐bearing semiconductor alloys

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates;Photonics;2021-06-11

2. Kinetic model for molecular beam epitaxy growth of InAsSbBi alloys;Journal of Applied Physics;2021-01-21

3. Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi;Applied Physics Letters;2020-08-10

4. Molecular beam epitaxy growth and optical properties of InAsSbBi;Journal of Applied Physics;2019-08-28

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