Kinetic model for molecular beam epitaxy growth of InAsSbBi alloys-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Kinetic model for molecular beam epitaxy growth of InAsSbBi alloys

Published:2021-01-21 Issue:3 Volume:129 Page:035303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Schaefer Stephen T.¹^ORCID,Milosavljevic Marko S.¹²³,Kosireddy Rajeev R.⁴,Johnson Shane R.¹^ORCID

Affiliation:

1. Center for Photonics Innovation & Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

2. Air Force Research Laboratory, Space Vehicles Directorate RVSWS, Kirtland Air Force Base, Albuquerque, New Mexico 87123, USA

3. Applied Technology Associates, Albuquerque, New Mexico 87123, USA

4. Center for Photonics Innovation & Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287, USA

Funder

Air Force Research Laboratory

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0035193

Reference38 articles.

1. Molecular beam epitaxy growth and optical properties of InAsSbBi

2. Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy

3. Structural properties of bismuth‐bearing semiconductor alloys

4. Kinetics of droplet formation and Bi incorporation in GaSbBi alloys

5. Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy;Semiconductors;2023-09

2. Impact of unintentional Sb in the tensile InAs layer of strain-balanced type-II InAs/InAsSb superlattices grown on GaSb by molecular beam epitaxy;Journal of Applied Physics;2023-08-01

3. Surfactant effect of Bi on InAs quantum dot laser diode;Japanese Journal of Applied Physics;2022-11-17

4. Growth of InPBi on InP(311)B Substrate by Molecular Beam Epitaxy;physica status solidi (a);2021-11-16

5. Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates;Photonics;2021-06-11

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3