Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy

Published:2017-08-21 Issue:8 Volume:111 Page:082104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Webster Preston T.¹²,Shalindar Arvind J.³,Schaefer Stephen T.¹,Johnson Shane R.¹

Affiliation:

1. Center for Photonics Innovation and School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

2. Air Force Research Laboratory, Space Vehicles Directorate, 3550 Aberdeen Ave. SE, Kirtland AFB, New Mexico 87117, USA

3. Center for Photonics Innovation and School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287, USA

Funder

National Science Foundation (NSF)

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4994847

Reference19 articles.

1. Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

2. Photoluminescence of InAsBi and InAsSbBi grown by organometallic vapor phase epitaxy

3. Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices

4. High Bi content GaSbBi alloys

5. Bi-induced band gap reduction in epitaxial InSbBi alloys

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1. Theoretical study of adsorption of Bi on cation-rich InAs/(0 0 1) and InP(0 0 1))- ζ (4 × 2) reconstructed surfaces;Materials Science and Engineering: B;2024-04

2. Evidence for ionization damage in mid-wave infrared nBn detectors;Applied Physics Letters;2024-03-04

3. Enhanced minority carrier lifetime in bulk hydrogen-passivated InAsSbBi;Applied Physics Letters;2024-01-08

4. Demonstration of a 4.32 μ m cutoff InAsSbBi nBn photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing;Applied Physics Letters;2023-07-31

5. Photoluminescence and minority carrier lifetime of quinary GaInAsSbBi grown on GaSb by molecular beam epitaxy;Applied Physics Letters;2022-01-17

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