Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs-Reference-Cited by-同舟云学术

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

Published:2012-03-01 Issue:10 Volume:23 Page:1799-1804
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Riordan Nathaniel A.,Gogineni Chaturvedi,Johnson Shane R.,Lu Xianfeng,Tiedje Tom,Ding Ding,Zhang Yong-Hang,Fritz Rafael,Kolata Kolja,Chatterjee Sangam,Volz Kerstin,Koch Stephan W.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10854-012-0665-1.pdf

Reference23 articles.

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4. B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E.C. Young, T. Tiedje, Phys. Rev. Lett. 97, 067205 (2006)

5. S. Tixier, M. Adamcyk, E.C. Young, J.H. Schmid, T. Tiedje, J. Cryst. Growth 251(1), 449 (2003)

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