Bi-induced band gap reduction in epitaxial InSbBi alloys-Reference-Cited by-同舟云学术

Bi-induced band gap reduction in epitaxial InSbBi alloys

Published:2014-11-24 Issue:21 Volume:105 Page:212101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rajpalke M. K.¹,Linhart W. M.¹,Yu K. M.²,Birkett M.¹^ORCID,Alaria J.¹,Bomphrey J. J.³,Sallis S.⁴,Piper L. F. J.⁴,Jones T. S.³,Ashwin M. J.³,Veal T. D.¹^ORCID

Affiliation:

1. Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF, United Kingdom

2. Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA

3. Department of Chemistry, University of Warwick, Coventry CV4 7AL, United Kingdom

4. Materials Science and Engineering, Binghamton University, Binghamton, New York 13902, USA

Funder

U.S. Department of Energy (DOE)

State University of New York Research Foundation (RFSUNY)

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902442

Reference31 articles.

1. Band gap of GaAs1−xBix, 0

2. Valence band anticrossing in GaBixAs1−x

3. Composition dependence of photoluminescence of GaAs1−xBix alloys

4. Giant Spin-Orbit Bowing inGaAs1−xBix

5. Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

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