Lattice constant, bandgap energy, absorption coefficient and dielectric function of the antimony-rich InBixSb1-x alloy using first-principles calculations
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Reference42 articles.
1. Composition dependence of photoluminescence of GaAs1−xBix alloys;Lu;Appl. Phys. Lett.,2009
2. Semi-empirical growth model of InSbBi grown by molecular beam epitaxy;Loke;Mat. Sci. Eng. B,2024
3. Growth and properties of GaSbBi alloys;Rajpalke;Appl. Phys. Lett.,2013
4. Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices;Webster;J. Appl. Phys.,2016
5. Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy;Loke;Mater. Sci. Engin. B,2023
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