Ab initiostudy of the strain dependent thermodynamics of Bi doping in GaAs-Reference-Cited by-同舟云学术

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Ab initiostudy of the strain dependent thermodynamics of Bi doping in GaAs

Published:2012-08-28 Issue:8 Volume:86 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Jacobsen Heather,Puchala Brian,Kuech Thomas F.,Morgan Dane

Funder

National Science Foundation

U.S. Department of Energy

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.86.085207/fulltext

Reference62 articles.

1. Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy

2. Lattice dynamics study of bismuth III–V compounds

3. Effect of thermal annealing on structural and optical properties of the GaAs0.963Bi0.037alloy

4. Bismuth alloying in GaAs: a first-principles study

5. Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix

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1. Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces;Journal of Applied Physics;2024-03-27

2. Chemomechanics in alloy phase stability;Physical Review Materials;2024-03-12

3. Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots;Nanomaterials;2024-02-17

4. Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt;Scientific Reports;2024-01-16

5. Performance assessment of a triple-junction solar cell with 1.0 eV GaAsBi absorber;Discover Nano;2023-06-16

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