Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2953176
Reference31 articles.
1. Physics and Applications of Dilute Nitrides
2. From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction
3. Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements inGaAs1−xNx
4. Electron effective mass and Si-donor binding energy inGaAs1−xNxprobed by a high magnetic field
Cited by 92 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Intervalley energy separation in the conduction band of InAs1−x Bi x determined by terahertz emission spectroscopy;Japanese Journal of Applied Physics;2023-04-01
2. GaAsBi: From Molecular Beam Epitaxy Growth to Devices;physica status solidi (b);2021-11-21
3. The bandgap energy of the dilute bismuth GaBi x Sb1−x alloy depending on temperature;Materials Science-Poland;2021-09-01
4. Photovoltaic performance improvement of GaAs1-xBix nanowire solar cells in terms of light trapping capability and efficiency;Solar Energy;2021-06
5. Kinetic model for molecular beam epitaxy growth of InAsSbBi alloys;Journal of Applied Physics;2021-01-21
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3