Inhomogeneous low temperature epitaxial breakdown during Si overgrowth of GeSi quantum dots
Author:
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3610527
Reference33 articles.
1. Semiconductor molecular‐beam epitaxy at low temperatures
2. Surface roughening during low temperature Si(100) epitaxy
3. Critical epitaxial thicknesses for low‐temperature (20–100 °C) Ge(001)2×1 growth by molecular‐beam epitaxy
4. Surface Morphology during Multilayer Epitaxial Growth of Ge(001)
5. Low-temperature growth morphology of singular and vicinal Ge(001)
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1. MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates;Materials Science in Semiconductor Processing;2023-10
2. Capturing Dislocation Half-Loop Formation and Dynamics in Epitaxial Growth Atomistically at Diffusive Time Scales;Materialia;2021-12
3. Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001);Applied Physics Letters;2014-01-06
4. Grazing-incidence small-angle X-ray scattering from Ge nanodots self-organized on Si(001) examined with soft X-rays;Journal of Synchrotron Radiation;2013-11-05
5. Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer;Journal of Physics: Condensed Matter;2013-07-09
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