Surface Morphology during Multilayer Epitaxial Growth of Ge(001)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.74.1127/fulltext
Reference32 articles.
1. Delta doping in silicon
2. Critical island size for layer-by-layer growth
3. Continuum models of crystal growth from atomic beams with and without desorption
4. A RHEED Study of Epitaxial Growth of Iron on a Silicon Surface: Experimental Evidence for Kinetic Roughening
Cited by 198 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Unique Edge Reconstructions and Related Edgeless Properties of Mono‐ and Few‐Layered α‐Phase Puckered 2D Materials;Small Structures;2024-06-19
2. PbS Quantum Dots Ink with Months‐Long Shelf‐Lifetime Enabling Scalable and Efficient Short‐Wavelength Infrared Photodetectors;Advanced Materials;2024-02-14
3. Phase composition of polycrystalline HfNx (0.45 ≤ x ≤ 1.60) and effects of low-energy ion irradiation on microstructure, texture, and physical properties;Journal of Vacuum Science & Technology A;2023-10-10
4. Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrate by molecular beam epitaxy;Journal of Crystal Growth;2023-09
5. The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy;Journal of Crystal Growth;2023-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3