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Capturing Dislocation Half-Loop Formation and Dynamics in Epitaxial Growth Atomistically at Diffusive Time Scales

  • Published:2021-12 Issue: Volume:20 Page:101253
  • ISSN:2589-1529
  • Container-title:Materialia
  • language:en
  • Short-container-title:Materialia

Author:

Rodriguez Salvador ValtierraORCID,Frick Mathieu,Quitoriano NathanielORCID,Ofori-Opoku NanaORCID,Provatas Nikolas,Bevan Kirk H.ORCID

Funder

Canada Foundation for Innovation

Consejo Nacional de Ciencia y Tecnología

Natural Sciences and Engineering Research Council of Canada

Publisher

Elsevier BV

Subject

General Materials Science

Reference66 articles.

1. Self-assembled ge/si dots for faster field-effect transistors;Schmidt;IEEE Trans. Electron Devic.,2001

2. Inhomogeneous low temperature epitaxial breakdown during si overgrowth of gesi quantum dots;Petz;J. Appl. Phys.,2011

3. Epitaxial growth of ge and sige on si substrates;Nylandsted Larsen;Mater. Sci. Semiconduct. Process.,2006

4. High-mobility si and ge structures;Schäffler;Semiconduct. Sci. Technol.,1997

5. Germanium epitaxy on silicon;Ye;Sci. Technol. Adv. Mater.,2014

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