Positron beam defect profiling of silicon epitaxial layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349329
Reference10 articles.
1. Atomic Layer Doping (ALD) technology in Si and its application to a new structure FET
2. Hydrogen-implantation-induced damage in silicon
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4. Interaction of positron beams with surfaces, thin films, and interfaces
5. Performance and processing line integration of a silicon molecular beam epitaxy system
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