Defects and Impurities at the Si/Si(100) Interface Studied with Monoenergetic Positrons-Reference-Cited by-同舟云学术

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Defects and Impurities at the Si/Si(100) Interface Studied with Monoenergetic Positrons

Published:1988-07-11 Issue:2 Volume:61 Page:187-190
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Schultz Peter J.,Tandberg E.,Lynn K. G.,Nielsen Bent,Jackman T. E.,Denhoff M. W.,Aers G. C.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.61.187/fulltext

Reference25 articles.

1. The Growth of Novel Silicon Materials

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