Atomic Layer Doping (ALD) technology in Si and its application to a new structure FET
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference3 articles.
1. A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET)
2. The delta-doped field-effect transistor (δFET)
3. Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si
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1. Quantifying atom-scale dopant movement and electrical activation in Si:P monolayers;Nanoscale;2018
2. Short-channel-effect-suppressed sub-0.1-μm grooved-gate MOSFET's with W gate;IEEE Transactions on Electron Devices;1995
3. Transconductance and mobility of Si:B delta MOSFETs;IEEE Transactions on Electron Devices;1993
4. A systematic investigation of N-channel delta-doped MOSFETs grown by M.B.E.;Microelectronic Engineering;1992-09
5. Si solid phase epitaxy on Si-Sb and Si-B surface phases;Journal of Crystal Growth;1992-06
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