Real-time studies of surface roughness development and reticulation mechanism of advanced photoresist materials during plasma processing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3055268
Reference20 articles.
1. Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography
2. 193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries
3. Investigation of surface modifications of 193 and 248 nm photoresist materials during low-pressure plasma etching
4. Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations
5. Effect of water-contact on the roughness of patterned photoresist investigated by AFM analysis
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