Modulation‐doped In0.48Al0.52P/In0.2Ga0.8As field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108756
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5. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
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1. Improved InAlGaP-based heterostructure field-effect transistors;Semiconductor Science and Technology;2006-03-07
2. n + -GaAs / p + -InAlGaP / n + -InAlGaP Camel-Gate High-Electron Mobility Transistors;Electrochemical and Solid-State Letters;2006-02-01
3. High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance;Electronics Letters;2000
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