High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101035
Reference14 articles.
1. Interface properties for GaAs/InGaAlP heterojunctions by the capacitance‐voltage profiling technique
2. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction byC‐Vprofiling
3. Temperature‐dependent optical spectra of single quantum wells fabricated using interrupted molecular beam epitaxial growth
4. InGaP/InGaAlP double‐heterostructure and multiquantum‐well laser diodes grown by molecular‐beam epitaxy
5. InGaP/InGaAlP double‐heterostructure and multiquantum‐well laser diodes grown by molecular‐beam epitaxy
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