Experimental and theoretical investigation ofGa1−xInxAssurface reactivity to phosphorus
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.235314/fulltext
Reference42 articles.
1. The influence of alternative group-V sources on heterointerface quality in the system GaInAs(P) on InP
2. Formation of interfaces in InGaP/GaAs/InGaP quantum wells
3. Metal Organic Molecular Beam Epitaxy Growth of Ga0.5In0.5P/GaAs Quantum Well Structures
4. Interface characterization of an InP/InGaAs resonant tunneling diode by scanning tunneling microscopy
5. Interface quality and electron transfer at the GaInP on GaAs heterojunction
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1. Interface Engineering for InGaAs n-MOSFET Application Using Plasma PH[sub 3]–N[sub 2] Passivation;Journal of The Electrochemical Society;2010
2. InGaAs/AlGaAs Quantum Dot Nanostructures for 980 nm Operation;Journal of Electronic Materials;2008-02-02
3. Experimental and theoretical investigation into the difficulties of thallium incorporation into III-V semiconductors;Physical Review B;2005-09-27
4. Evidence of interface-induced persistent photoconductivity in InP∕In0.53Ga0.47As∕InP double heterostructures grown by molecular-beam epitaxy;Applied Physics Letters;2005-07-18
5. Composition modulation and local structure in strained diluted GaInNAs nitride alloy thin layers on GaAs substrates;MRS Proceedings;2005
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