Improved InAlGaP-based heterostructure field-effect transistors-Reference-Cited by-同舟云学术

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Improved InAlGaP-based heterostructure field-effect transistors

Published:2006-03-07 Issue:4 Volume:21 Page:540-543
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lin Y S,Huang D H,Hsu W C,Wang T B,Su K H,Huang J C,Ho C H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE

2. High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy

3. Temperature-Dependent Characteristics of InGaP∕InGaAs∕GaAs High-Electron Mobility Transistor Measured between 77 and 470 K

4. Depletion- and enhancement-mode In[sub 0.49]Ga[sub 0.51]P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage

5. High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, elastic, electronic and lattice dynamical properties of III-P quaternary alloys matched to AlP;Materials Science in Semiconductor Processing;2013-06

2. Optical and electrical characteristics of GaAs/InGaAs quantum-well device;Journal of Alloys and Compounds;2009-03

3. Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors;Semiconductor Science and Technology;2008-10-21

4. ELECTRON SUBBAND STRUCTURE AND MOBILITY TRENDS IN P-N DELTA-DOPED QUANTUM WELLS IN SI;Progress In Electromagnetics Research Letters;2008

5. Improved tolerance to operation temperature in δ-doped inverted HFETs;Semiconductor Science and Technology;2007-03-09

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