Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125385
Reference12 articles.
1. Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
2. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
3. Novel high mobility Ga0.51In0.49P/GaAs modulation‐doped field‐effect transistor structures grown using a gas source molecular beam epitaxy
4. Enhancement-mode buried gate InGaP/AlGaAs/InGaAs heterojunction FETs fabricated by selective wet etching
5. GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: design, fabrication, and device results
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1. Optical and electrical characteristics of GaAs/InGaAs quantum-well device;Journal of Alloys and Compounds;2009-03
2. n + -GaAs / p + -InAlGaP / n + -InAlGaP Camel-Gate High-Electron Mobility Transistors;Electrochemical and Solid-State Letters;2006-02-01
3. Effect of Temperature on Novel InAlGaP∕GaAs∕InGaAs Camel-Gate Pseudomorphic High-Electron-Mobility Transistors;Journal of The Electrochemical Society;2006
4. Characteristics of Spike-Free Single and Double Heterostructure-Emitter Bipolar Transistors;Japanese Journal of Applied Physics;2004-06-09
5. The investigation for various treatments of InAlGaP Schottky diodes;Optical Materials;2003-07
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