Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures-Reference-Cited by-同舟云学术

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Published:2020-04-01 Issue:4 Volume:10 Page:045028
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Besendörfer S.¹^ORCID,Meissner E.¹²^ORCID,Zweipfennig T.³^ORCID,Yacoub H.³^ORCID,Fahle D.⁴,Behmenburg H.⁴,Kalisch H.³,Vescan A.³^ORCID,Friedrich J.¹^ORCID,Erlbacher T.¹²^ORCID

Affiliation:

1. Fraunhofer Institute for Integrated Systems and Device Technology IISB, Schottkystr. 10, 91058 Erlangen, Germany

2. Chair of Electron Devices, University of Erlangen-Nürnberg, Cauerstr. 6, 91058 Erlangen, Germany

3. Compound Semiconductor Technology, RWTH Aachen University, 52074 Aachen, Germany

4. AIXTRON SE, 52134 Herzogenrath, Germany

Funder

European Commission

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5141905

Reference31 articles.

1. Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

2. Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

3. Carbon impurities and the yellow luminescence in GaN

4. Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

5. Properties of carbon-doped GaN

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