On the Dynamic R<sub>ON</sub>, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers-Reference-Cited by-同舟云学术

On the Dynamic R_ON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers

Published:2024-08 Issue:8 Volume:45 Page:1437-1440
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Cioni Marcello¹^ORCID,Chini Alessandro²^ORCID,Zagni Nicolò²^ORCID,Verzellesi Giovanni³^ORCID,Giorgino Giovanni¹,Cappellini Giacomo¹^ORCID,Miccoli Cristina¹,Toulon Gaetan⁴^ORCID,Wakrim Tariq⁵,Eloisa Castagna Maria¹,Constant Aurore⁵,Iucolano Ferdinando¹

Affiliation:

1. STMicroelectronics, Catania, Italy

2. Department of Engineering, “Enzo Ferrari,” Università di Modena e Reggio Emilia, Modena, Italy

3. Department of Sciences and Methods for Engineering (DISMI) and the EN&TECH Center, University of Modena and Reggio Emilia, Reggio Emilia, Italy

4. STMicroelectronics, Toulouse, Italy

5. STMicroelectronics, Tours, France

Funder

European Project Gallium Nitride for Advanced Power Applications

Electronic Component Systems for European Leadership Joint Undertaking

European Union’s Horizon 2020 Research and Innovation Programme, and Italy, Germany, France, Poland, Czech Republic, and The Netherlands

Publisher

Institute of Electrical and Electronics Engineers (IEEE)