Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122735
Reference7 articles.
1. Observation of Native Ga Vacancies in GaN by Positron Annihilation
2. Investigation of Vacancies in GaN by Positron Annihilation
3. Observation Of Native Ga Vacancies In Gan By Positron Annihilation
4. Influence of the molar ratio on the structural and electronic properties of MOVPE grown GaN
5. Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP
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