Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition
Author:
Affiliation:
1. National Centre for Scientific Research “Demokritos,” 15310 Athens, Greece
2. Physics Department, National and Kapodistrian University of Athens, 15772 Athens, Greece
3. National Institute for Materials Physics, 077125 Bucharest-Magurele, Romania
Funder
Horizon 2020 Framework Programme
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5090036
Reference33 articles.
1. Ferroelectricity in hafnium oxide thin films
2. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
3. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
4. Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications
5. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
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