Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors-Reference-Cited by-同舟云学术

Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Published:2013-09-09 Issue:11 Volume:103 Page:113502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lv Yuanjie,Feng Zhihong,Han Tingting,Dun Shaobo,Gu Guodong,Yin Jiayun,Sheng Baicheng,Liu Bo,Fang Yulong,Cai Shujun,Lin Zhaojun,Luan Chongbiao,Yang Qihao

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4820960

Reference24 articles.

1. Subcritical barrier AlN/GaN E/D-mode HFETs and inverters

2. Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

3. Self-aligned-gate GaN-HEMTs with heavily-doped n⁺-GaN ohmic contacts to 2DEG

4. Mobility-limiting mechanisms in polar semiconductor heterostructures

5. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions

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3. Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors;Nanoscale Research Letters;2016-08-23

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