Mobility-limiting mechanisms in polar semiconductor heterostructures-Reference-Cited by-同舟云学术

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Mobility-limiting mechanisms in polar semiconductor heterostructures

Published:2012-04 Issue:6-7 Volume:60 Page:3176-3180
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Pandey Saurabh,Cavalcoli Daniela,Minj Albert,Fraboni Beatrice,Cavallini Anna,Skuridina Daria,Vogt Patrick,Kneissl Michael

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

3. Electron mobility in modulation-doped AlGaN–GaN heterostructures

4. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

5. High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Undoped Polycrystalline Diamond Film—Electrical Transport Properties;Sensors;2021-09-12

2. Surface properties of AlInGaN/GaN heterostructure;Materials Science in Semiconductor Processing;2016-11

3. Electrical properties of extended defects in III-nitrides;Acta Materialia;2015-05

4. Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors;Chinese Physics B;2014-07

5. Electrical properties of dislocations in III-Nitrides;AIP Conference Proceedings;2014

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