Characterization of reactively evaporated TiN layers for diffusion barrier applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356392
Reference15 articles.
1. Applications of TiN thin films in silicon device technology
2. Limitation of Ti/TiN diffusion barrier layers in silicon technology
3. Bias‐induced stress transitions in sputtered TiN films
4. Growth and properties of radio frequency reactively sputtered titanium nitride thin films
5. TiN formed by evaporation as a diffusion barrier between Al and Si
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