TiN formed by evaporation as a diffusion barrier between Al and Si-Reference-Cited by-同舟云学术

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TiN formed by evaporation as a diffusion barrier between Al and Si

Published:1982-05 Issue:1 Volume:21 Page:14-18
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Ting C. Y.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.571700

Cited by 202 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermodynamic reassessments of the Ti–Si–C/Ti–Si–N systems and thermodynamic calculations of CVD TiSiCN hard-coating based on the Ti–Si–C–N quaternary system;Calphad;2023-09

2. Bulk Synthesis and Transport Properties of Rocksalt-Type Ti_1–xMg_xN Solid Solution;Inorganic Chemistry;2023-04-06

3. Effect of coating architecture on stress and energy relief efficiency of TiZrN coating on Si substrate;Thin Solid Films;2022-06

4. Resistance change in on-chip aluminum interconnects under cyclic thermo-mechanical stress;Microelectronics Reliability;2019-09

5. CMOS compatible metal stacks for suppression of secondary grains in Sc0.125Al0.875N;Journal of Vacuum Science & Technology A;2019-03

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