Hydrogen evolution from strained SixGe1−x(100)2×1:H surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363426
Reference45 articles.
1. In situ cleaning of silicon substrate surfaces by remote plasma-excited hydrogen
2. Process and Surface Characterization of Hydrogen Plasma Cleaning of Si(100)
3. Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy
4. The formation of hydrogen passivated silicon single‐crystal surfaces using ultraviolet cleaning and HF etching
5. Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy
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1. Etch Control and SiGe Surface Composition Modulation by Low Temperature Plasma Process for Si/SiGe Dual Channel Fin Application;IEEE Journal of the Electron Devices Society;2019
2. Anisotropic selective etching between SiGe and Si;Japanese Journal of Applied Physics;2018-05-22
3. Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2×1) Surfaces;The Journal of Physical Chemistry C;2014-05-01
4. Reassessment of the molecular mechanisms for H2 thermal desorption pathways from Si(1−x)Gex(001)-(2×1) surfaces;The Journal of Chemical Physics;2007-01-28
5. Quantitative coverage and stability of hydrogen-passivation layers on HF-etched Si(1−x)Gex surfaces;Journal of Applied Physics;2005-07-15
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